Optoelectronic and photovoltaic devices with low-reflectance surfaces

Low angle V-grooves are provided in the target surfaces of optoelectronic or photovoltaic devices such as solar cells and photodetectors. The low angle V-grooves increase the efficiency of the devices by promoting total internal reflection of light reflected from the target surface at the interface of the coverglass and the external environment

Photodetector Development for the Wheel Abrasion Experiment on the Sojourner Microrover of the Mars Pathfinder Mission

On-board the Mars Pathfinder spacecraft, launched in December of 1996, is a small roving vehicle named Sojourner. On Sojourner is an experiment to determine the abrasive characteristics of the Martian surface, called the Wheel Abrasion Experiment (WAE). The experiment works as follows: one of the wheels of the rover has a strip of black anodized aluminum bonded to the tread. The aluminum strip has thin coatings of aluminum, nickel and platinum deposited in patches. There are five (5) patches or samples of each metal, and the patches range in thickness from 200 A to 1000 A. The different metals were chosen for their differing hardness and their environmental stability. As the wheel is spun in the Martian soil, the thin patches of metal are abraded away, exposing the black anodization. The abrasion is monitored by measuring the amount of light reflected off of the samples. A photodetector was developed for this purpose, and that is the subject of this paper

Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells

Alpha voltaic batteries and methods thereof

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material

Rare Earth Doped High Temperature Ceramic Selective Emitters

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study develops a spectral emittance model for films of rare earth containing materials. Although there are several possible rare earth doped high temperature materials, this study was confined to rare earth aluminum garnets. Good agreement between experimental and theoretical spectral emittances was found for erbium, thulium and erbium-holmium aluminum garnets. Spectral emittances of these films are sensitive to temperature differences across the film. Emitter efficiency is also a sensitive function of temperature. For thulium aluminum garnet the efficiency is 0.38 at 1700 K but only 0.19 at 1262 K

Minority-carrier lifetime in InP as a function of light bias

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism

Two and Three Dimensional near Infrared Subcutaneous Structure Imager Using Real Time Nonlinear Video Processing

An imager is provided for viewing subcutaneous structures. In an embodiment of the invention, the imager includes a camera configured to generate a video frame, and an adaptive nonlinear processor. The adaptive nonlinear processor is configured to adjust a signal of the video frame below a first threshold to a maximum dark level and to adjust the signal of the video frame above a second threshold to a maximum light level. The imager further includes a display, configured to display the processed video frame

Pulsed laser illumination of photovoltaic cells

In future space missions, free electron lasers (FEL) may be used to illuminate photovoltaic receivers to provide remote power. Both the radio-frequency (RF) and induction FEL produce pulsed rather than continuous output. In this work we investigate cell response to pulsed laser light which simulates the RF FEL format. The results indicate that if the pulse repetition is high, cell efficiencies are only slightly reduced compared to constant illumination at the same wavelength. The frequency response of the cells is weak, with both voltage and current outputs essentially dc in nature. Comparison with previous experiments indicates that the RF FEL pulse format yields more efficient photovoltaic conversion than does an induction FEL format

Rare Earth Doped Yttrium Aluminum Garnet (YAG) Selective Emitters

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study presents a spectral emittance model for films and cylinders of rare earth doped yttrium aluminum garnets. Good agreement between experimental and theoretical film spectral emittances was found for erbium and holmium aluminum garnets. Spectral emittances of films are sensitive to temperature differences across the film. For operating conditions of interest, the film emitter experiences a linear temperature variation whereas the cylinder emitter has a more advantageous uniform temperature. Emitter efficiency is also a sensitive function of temperature. For holminum aluminum garnet film the efficiency is 0.35 at 1446K but only 0.27 at 1270 K